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Overview

Device Level Failure Analysis entails the entails the evaluation of microelectronic devices and integrated circuits that may have failed during design, manufacture, qualification, or service.

MEFAS has characterized three levels of engineering effort to demonstrate FA work.

Level I Analysis:

Provides broad cost effective initial analysis that typically captures more than 50% of failure modes.  The initial inspection employs the following techniques to verify packaging integrity and inspect for damage.

 

 

·         External device inspection

·         I/V Characterization (curve tracer) to verify failure

·         X-ray inspection

·         Scanning Acoustic Microscopy

·         Chemical or Mechanical De-capsulation

·         Optical microscopic Examination

 

Device Level Failure Analysis [Level I Analysis].

Level II Analysis:

Performed upon completion of level I analysis wherein no defects were found to pin point the X -Y location of device failure.

 

 

·         Light Emission Microscopy (LEM)

·         Liquid Crystal Analysis

·         Externally Induced Voltage Alterations (XIVA)

·         Thermal Imaging Microscopy (IR)

 

Device Level Failure Analysis [Level II Analysis]

Level III Analysis:

Performed upon the completion of Level II analysis.  The objective of level III analysis is to determine the exact location of the failure within the I.C.

 
  • Chemical de-layering
  • Precision cross sectioning
  • Focused Ion Beam (FIB) in conjunction with previous fault isolation

 

Device Level Failure Analysis [Level II Analysis]

 

 

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