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Advanced integrated
circuit processing and packaging has resulted in blocking access to
the active circuitry from the frontside of the die. This has occurred
because of SAP is required to fully prepare an electrically intact device thinned to 100microns or less with controlled accuracy, no damage, and with a highly polished surface. Thinning and polishing of the die allows Near Infrared (NIR) light to penetrate the backside so that imaging of the circuitry can be done. It also allows the transmission of emission sites to be seen when viewed under an emission microscope (PEM) or other backside tools.
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